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C-04 FET CHARACTERISTICS
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1.To demonstrate the operation of a Field Effect Transistor (FET) characteristics and testing methods.
2.To examine the relationship between the gate-to-source voltage (VGS), drain current (ID) and the dain-to-source voltage (VDS) in an N channel junction FET.
3.To measure and record correspondingly the VGS, ID and VDS values and then plot these values to form a set of drain characteristic curves.
4.To complete the experiment using these curves to determine the transconductance of the FET.
Description
FEATURES OF THE TRAINER:
Built in regulated power supply :+15v and -15v/300 mA.
Instruction Manual : Step-By-Step detailed instruction manual.
Dimension : 27cmX 17cm X 10cm
Input Supply : 230V AC/50 Hz mains operated
Housing : Enclosed in an elegant plastic injection molded cabinet for better viewing & portability.
Weight : 500 Gm.
This trainer is a glass-epoxy printed circuit board and all the symbols screen-printed on the front panel so that it enables the student to conduct the experiments easily
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